MAX8791GTA+【PDF 7/12 页】IC MOSFET DRIVER 8-TQFN

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Single-Phase, Synchronous MOSFET Drivers

INPUT (V IN )

C IN

PWM

DH

N H

2x 10 μ F

PWM

SKIP

SKIP

BST

C BST

0.22 μ F

L1

0.36 μ H

+5V BIAS

SUPPLY

CV DD

1.0 μ F

V DD

MAX8791

MAX8791B

LX

DL

N L

D L

OUTPUT (V OUT )

C OUT

2x 330 μ F

6m ?

GND

PAD

Figure 3. Typical MOSFET-Driver Application Circuit

Table 1. Typical Components

DESIGNATION

N H

N L

BST Capacitor (C BST )

Schottky Diode

Inductor (L1)

Output Capacitors (C OUT )

Input Capacitors (C IN )

QTY

1 per phase

1–2 per phase

1 per phase

Optional

1 per phase

1–2 per phase

1–2 per phase

COMPONENT SUPPLIERS

Siliconix Si4860DY

Siliconix Si4336DY

0.1μF or 0.22μF ceramic capacitor

3A, 40V Schottky diode

0.36μH, 26A, 0.9m ? power inductor

330μF, 6m ? per phase

10μF, 25V X5R ceramic capacitors

Detail Description

The MAX8791/MAX8791B single-phase gate drivers,

along with the MAX8736 or MAX8786 multiphase con-

trollers, provide flexible multiphase CPU core-voltage

supplies. The low driver resistance allows up to 7A out-

put peak current. Each MOSFET driver in the

MAX8791/MAX8791B is capable of driving 3nF capaci-

tive loads with only 9ns propagation delay and 4ns/8ns

(typ) fall/rise times, allowing operation up to 3MHz per

phase. Larger capacitive loads are allowable but result

in longer propagation and transition times. Adaptive

dead-time control prevents shoot-through currents and

maximizes converter efficiency while allowing operation

with a variety of MOSFETs and PWM controllers. An

input undervoltage lockout (UVLO) circuit allows proper

power-on sequencing.

PWM Input

The drivers for the MAX8791/MAX8791B are disabled—

DH and DL pulled low—if the PWM input remains in the

midlevel window for at least 300ns (typ). Once the

PWM signal is driven high or low, the MAX8791/

MAX8791B immediately exit the low-current shutdown

state and resume active operation. Outside the shut-

down state, the drivers are enabled based on the rising

and falling thresholds specified in the Electrical

Characteristics.

MOSFET Gate Drivers (DH, DL)

The high-side driver (DH) has a 0.9 ? sourcing resis-

tance and 0.7 ? sinking resistance, resulting in 2.2A

peak sourcing current and 2.7A peak sinking current

with a 5V supply voltage. The low-side driver (DL) has a

typical 0.7 ? sourcing resistance and 0.3 ? sinking

resistance, yielding 2.7A peak sourcing current and 8A

peak sinking current. This reduces switching losses,

making the MAX8791/MAX8791B ideal for both high-

frequency and high output-current applications.

_______________________________________________________________________________________

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